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PDF IFN147 Data sheet ( Hoja de datos )
| Número de pieza | IFN147 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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D-6
IFN147
N-Channel Silicon Junction Field-Effect Transistor
www.DataSheet4U.com
01/99
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK147
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IFN147
Min Typ Max
– 40
–1
–1
– 0.3 – 1.2
5 30
Process NJ450
Unit Test Conditions
V IG = – 1 µA, VDS = ØV
nA VGS = – 30V, VDS = ØV
µA VGS = – 30V, VDS = ØV
V VDS = 10V, ID = 1 µA
mA VDS = 10V, VGS = ØV
TA = 150°C
gfs 30 40
mS
VDS = 10V, VGS = ØV
IDSS = 5 mA
Ciss 75 pF VDS = 10V, VGS = ØV
Crss 15 pF VDS = 10V, ID = Ø
NF 1 dB VDS = 10V, ID = 5 mA
10 dB RG = 100Ω
f = 1 kHz
f = 1 kHz
f = 1 Hz
f = 1 kHz
f = 100 Hz
TOÐ18 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
www.interfet.com
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IFN147.PDF ] | |
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