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PDF D1423 Data sheet ( Hoja de datos )

Número de pieza D1423
Descripción NPN Transistor - 2SD1423
Fabricantes Panasonic Semiconductor　
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! D1423 Hoja de datos, Descripción, Manual

Transistor
2SD1423, 2SD1423A
Siwliwcwo.DnataNShPeeNt4Ue.copmitaxial planer type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD1423
base voltage 2SD1423A
Collector to 2SD1423
emitter voltage 2SD1423A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
7
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SD1423
2SD1423A
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
30
V
60
Collector to emitter 2SD1423
voltage
2SD1423A VCEO
IC = 2mA, IB = 0
25
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
IE = 10µA, IC = 0
7
V
VCE = 10V, IC = 150mA*2 85 340
VCE = 10V, IC = 500mA*2
40
IC = 300mA, IB = 30mA*2
0.6 V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
6 15 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1

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