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RMWB11001 fiches techniques PDF

Fairchild Semiconductor - 11 GHZ Buffer Amp

Numéro de référence RMWB11001
Description 11 GHZ Buffer Amp
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RMWB11001 fiche technique
www.DataSheet4U.com
June 2004
RMWB11001
11 GHz Buffer Amplifier MMIC
General Description
The RMWB11001 is a 2-stage GaAs MMIC amplifier
designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF amplifiers, multipliers and mixers it forms part
of a complete 38 GHz transmit/receive chipset. The
RMWB11001 utilizes our 0.25µm power PHEMT process
and is sufficiently versatile to serve in a variety of medium
power amplifier applications.
Features
• 4 mil substrate
• Small-signal gain 21dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.0mm x 1.3mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
104
+8
-30 to +85
-55 to +125
180
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C

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