DataSheetWiki


EN29F080 fiches techniques PDF

EON - 8 Megabit (1024K x 8-bit) Flash Memory

Numéro de référence EN29F080
Description 8 Megabit (1024K x 8-bit) Flash Memory
Fabricant EON 
Logo EON 





1 Page

No Preview Available !





EN29F080 fiche technique
www.DatEaSNhee2t49UF.co0m80
8 Megabit (1024K x 8-bit) Flash Memory
EN29F080
FEATURES
5.0V ± 10%, single power supply operation
- Minimizes system level power requirements
Manufactured on 0.35 µm process technology
High performance
- Access times as fast as 45 ns
Low power consumption
- 25 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- 16 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Group sector protection:
Hardware method of locking of sector groups
to prevent any program or erase operations
within that sector group
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors
High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 16s typical
Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle
bits feature
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.35 µm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
>100K program/erase endurance cycle
Ready/Busy# output (RY/BY#)
- Provides a hardware method for detecting
program or erase cycle completion.
Hardware reset pin (Reset#)
- Resets internal state machine to read mode
GENERAL DESCRIPTION
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized
into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of
64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F080 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F080 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )
controls, which eliminate bus contention issues. This device is designed to allow either single (or
multiple) Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
4800 Great America Parkway, Suite 202
1
Santa Clara, CA 95054
Rev. C, Issue Date: 2001/07/05
Tel: 408-235-8680
Fax: 408-235-8685

PagesPages 30
Télécharger [ EN29F080 ]


Fiche technique recommandé

No Description détaillée Fabricant
EN29F080 8 Megabit (1024K x 8-bit) Flash Memory EON
EON

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche