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Número de pieza BLF571
Descripción HF / VHF power LDMOS transistor
Fabricantes NXP Semiconductors 
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BLF571
HF / VHF power LDMOS transistor
Rev. 01 — 11 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
Table 1. Production test performance
Mode of operation
f
(MHz)
CW 225
VDS
PL
(V) (W)
50 20
Gp
(dB)
27.5
ηD
(%)
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 50 mA:
N Average output power = 20 W
N Power gain = 27.5 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (10 MHz to 500 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications

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BLF571 pdf
NXP Semiconductors
www.DataSheet4U.com
BLF571
HF / VHF power LDMOS transistor
7.2 Reliability
105
Years
104
(1) (2) (3) (4) (5) (6)
103
102
10
(7) (8) (9) (10) (11)
1
0 0.4
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3. BLF571 electromigration
0.8
001aaj173
1.2 1.6
IDS(DC) (A)
BLF571_1
Preliminary data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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BLF571 arduino
NXP Semiconductors
www.DataSheet4U.com
BLF571
HF / VHF power LDMOS transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
Description
CW Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
BLF571_1
Release date
20081211
Data sheet status
Preliminary data sheet
Change notice
-
Supersedes
-
BLF571_1
Preliminary data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
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