FDP20N50F Datasheet PDF - Fairchild Semiconductor
| Part Number | FDP20N50F | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
| Logo |  |
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There is a preview and FDP20N50F download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 20 A, 260 m
Features
• RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
D
S
TO-220
GDS
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
G
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP20N50F FDPF20N50FT
500
±30
20 20*
12.9 12.9*
80 80*
1110
20
25
20
250 38.5
2.0 0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FDP20N50F
0.5
0.5
62.5
FDPF20N50FT
3.3
-
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
1
www.fairchildsemi.com
|
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Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-4
10-3
PDM
t1
t2
*Notes:
1. ZJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDP20N50F electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDP20N50F.PDF Datasheet ] | |
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