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Datasheet CJSE002-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CJS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJS2010 | Dual N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS2010
V(BR)DSS
Dual N-channel MOSFET
RDS(on)MAX
9.5mΩ@4.5V
10mΩ@4V
20V 10.5mΩ@3.5V 11.5mΩ@3.1V
13mΩ@2.5V
FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Cur  JCET mosfet | | |
| 2 | CJS6562 | N- and P-Channel 12-V(G-S) MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP-8 Plastic-Encapsulate Transistors
CJS6562
P-channel
V(BR)DSS
-20V
N- and P-Channel 12-V(G-S) MOSFET
RDS(on)MAX
50 mΩ@-4.5V 90mΩ@-2.5V
ID
-3.5A
TSSOP8
N-channel
V(BR)DSS
20V
RDS(on)MAX
30mΩ@ 4.5V 40mΩ@2.5V
ID
4.5A
MARKING
Equi JCET mosfet | | |
| 3 | CJS8205 | Dual N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETs
CJS8205 Dual N-channel MOSFET
V(BR)DSS
19 V
RDS(on)MAX
25mΩ@4.5V
32mΩ@2.5V
ID
6A
TSSOP8
FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capabi JCET mosfet | | |
| 4 | CJS8804 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS8804
V(BR)DSS
9
Dual N-Channel MOSFET
RDS(on)MAX
13Pȍ#9 14Pȍ #9 15.5Pȍ#9
19 Pȍ#9 27Pȍ#9
ID
8$
TSSOP8
DESCRIPTION The CJS8804 use advanced trench technology to provide excellent
RDS(ON JCET mosfet | | |
| 5 | CJS8810 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8810
V(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-Channel MOSFET
RDS(on)MAX
20mΩ@10V 22mΩ @4.5V 24 mΩ@3.8V 26mΩ@2.5V 35mΩ@1.8V
ID
7A
TSSOP8
DESCRIPTION The CJS8810 uses advanced trench technology to provide excelle JCET mosfet | | |
| 6 | CJS8810-HF | N-Channel MOSFET MOSFET
CJS8810-HF
N-Channel RoHS Device Halogen Free
Features
- Uses advanced trench technology. - Excellent RDS(ON) and low gate charge.
Mechanical data
- Case: TSSOP8, molded plastic.
Circuit diagram
D1/D2 S2 S2 G2
8 765
1 4
TSSOP8
0.122(3.10) 0.114(2.90)
8 5
0.047(1.20) MAX.
8765
0.258(6.55)  Comchip mosfet | | |
| 7 | CJS8820 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8820
V(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-Channel MOSFET
RDS(on)MAX
21mΩ@10V 24mΩ @4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V
ID
7A
TSSOP8
DESCRIPTION The CJS8820 uses advanced trench technology to provide excellen JCET mosfet | |
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