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K3048 fiches techniques PDF

Panasonic Semiconductor - MOSFET ( Transistor ) - 2SK3048

Numéro de référence K3048
Description MOSFET ( Transistor ) - 2SK3048
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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K3048 fiche technique
Power F-MOS FETs
2SK3048
Siwliwcwo.DnataNSh-eeCt4hU.aconmnel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
600
±30
±3
±6
22.5
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
35
2
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 3A, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Turn-off time (delay time)
td(off)
Fall time
tf
VDS = 480V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 200V, ID = 2A
VGS = 10V, RL = 100
9.9±0.3
unit: mm
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.3
1 2 3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
min typ max Unit
100 µA
±1 µA
600 V
2 5V
1.7 2.5
1.5 2.5
S
1.5 V
750 pF
80 pF
25 pF
15 ns
25 ns
90 ns
40 ns
1

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