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National Semiconductor - Reference Diode

Numéro de référence LM113-1H
Description Reference Diode
Fabricant National Semiconductor 
Logo National Semiconductor 





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LM113-1H fiche technique
December 1994
LM113 LM313 Reference Diode
General Description
The LM113 LM313 are temperature compensated low volt-
age reference diodes They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit As such they have the
same low noise and long term stability as modern IC op
amps Further output voltage of the reference depends only
on highly-predictable properties of components in the IC so
they can be manufactured and supplied to tight tolerances
Features
Y Low breakdown voltage 1 220V
Y Dynamic impedance of 0 3X from 500 mA to 20 mA
Y Temperature stability typically 1% overb55 C to 125 C
range (LM113) 0 C to 70 C (LM313)
Y Tight tolerance g5% g2% or g1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry in low-voltage power supplies or in
battery powered equipment The fact that the breakdown
voltage is equal to a physical property of silicon the ener-
gy-band gap voltage makes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions
Schematic and Connection Diagrams
Metal Can Package
Typical Applications
Level Detector for Photodiode
Order Number
LM113H LM113H 883
LM113-1H LM113-1H 883
LM113-2H LM113-2H 883
or LM313H
See NS Package Number H02A
TL H 5713 – 1
Low Voltage Regulator
C1995 National Semiconductor Corporation TL H 5713
Solid tantalum
TL H 5713 – 2
RRD-B30M115 Printed in U S A

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