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Renesas Technology - Silicon N Channel Power MOS FET Power Switching

Numéro de référence RJK0365DPA
Description Silicon N Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK0365DPA fiche technique
RJK0365DPA
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Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 7.0 mtyp. (at VGS = 10 V)
Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1655-0300
Rev.3.00
Aug 05, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
12
14.4
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1655-0300 Rev.3.00 Aug 05, 2008
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