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Renesas Technology - Silicon N Channel Power MOS FET Power Switching

Numéro de référence RJK0362DSP
Description Silicon N Channel Power MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK0362DSP fiche technique
RJK0362DSP
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.0 mtyp. (at VGS = 10 V)
Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1653-0501
Rev.5.01
Apr 24, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
16
128
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
16
15
22.5
2.0
62.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1653-0501 Rev.5.01 Apr 24, 2008
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