(PDF) RJK0352DSP Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	RJK0352DSP
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! RJK0352DSP www.DataSheet4U.com Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.3 mΩ typ. (at VGS = 10 V) • Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1660-0501 Rev.5.01 Apr 24, 2008 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse)Note1 18 144 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 18 17 28.9 2.0 62.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1660-0501 Rev.5.01 Apr 24, 2008 Page 1 of 3 1 page

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