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Numéro de référence | W12NA60 | ||
Description | STW12NA60 | ||
Fabricant | STMicroelectronics | ||
Logo | |||
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STH12NA60/FI
STW12NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STH12NA60
STH12NA60FI
STW12NA60
VDSS
600 V
600 V
600 V
R DS( on)
< 0.6 Ω
< 0.6 Ω
< 0.6 Ω
ID
12 A
7A
12 A
s TYPICAL RDS(on) = 0.44 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
TO-247
3
2
1
TO-218
33
22
1
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Val ue
STH/STW12NA60 STH12NA60FI
600
600
± 30
12 7
7.6 4.4
48 48
190 80
1. 52
0. 64
4000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
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Pages | Pages 11 | ||
Télécharger | [ W12NA60 ] |
No | Description détaillée | Fabricant |
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