HN7G10FE Datasheet PDF - Toshiba Semiconductor
| Part Number | HN7G10FE | |
| Description | Power Management Switch Applications | |
| Manufacturers | Toshiba Semiconductor | |
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There is a preview and HN7G10FE download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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TOSHIBA Multichip Discrete Device
HN7G10FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
HN7G10FE
Unit: mm
• Q1 (transistor): 2SC5376F equivalent
• Q2 (MOSFET): SSM3K03FE equivalent
Q1 (transistor) Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
15
12
5
400
50
Q2 (MOSFET) Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
VGSS
ID
Rating
20
10
50
Unit
V
V
V
mA
mA
Unit
V
V
mA
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.003 g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Note 1: Total rating
Symbol
PC (Note 1)
Tj
Tstg
Rating
100
150
−55~150
Unit
mW
°C
°C
Marking
Type Name
hFE Rank
Pin Assignment (top view)
654
78A Q1 Q2
123
1 2005-03-29
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Q2 (S-MOS)
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HN7G10FE
5 2005-03-29
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HN7G10FE electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HN7G10FE.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| HN7G10FE | The function is Power Management Switch Applications. Toshiba Semiconductor | |
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