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Toshiba Semiconductor - Power Management Switch Application

Numéro de référence HN7G02FU
Description Power Management Switch Application
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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HN7G02FU fiche technique
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TOSHIBA Multi Chip Discrete Device
HN7G02FU
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Unit: mm
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
5
100
Unit
V
V
V
mA
Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
VDS
VGSS
ID
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Marking
Unit
Collector power dissipation
Junction temperature
Storage temperature range
PC
(Note 1)
Tj
Tstg
200
150
55~150
mW
°C
°C
FT
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum Equivalent Circuit (top view)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
654
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Total rating
Q1 Q2
123
1 2007-11-01

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