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PDF HN7G01FE Data sheet ( Hoja de datos )
| Número de pieza | HN7G01FE | |
| Descripción | Power Management Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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HN7G01FE
www.DataSheet4U.com
TOSHIBA Multichip Discrete Device
HN7G01FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Unit: mm
• Q1 (transistor): 2SA1955 equivalent
• Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
−15
−12
−5
−400
−50
Unit
V
V
V
mA
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
VGSS
ID
Q1, Q2 Common Ratings (Ta = 25°C)
Rating
20
10
50
Unit
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1F
Weight: 0.003 g (typ.)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P (Note 1)
Tj
Tstg
100
125
−55~125
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Type Name
hFE Rank
Pin Assignment (top view)
654
7A Q1 Q2
123
1
2007-11-01
1 page  
Q2 (S-MOS)
www.DataSheet4U.com
HN7G01FE
5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HN7G01FE.PDF ] | |
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