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NEC - MOSFET ( Transistor ) - 2SK3326

Numéro de référence K3326
Description MOSFET ( Transistor ) - 2SK3326
Fabricant NEC 
Logo NEC 





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K3326 fiche technique
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3326
Isolated TO-220
FEATURES
Low gate charge :
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±10
±40
40
2.0
150
–55 to +150
10
10.7
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
2000

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