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Numéro de référence | 2N6576 | ||
Description | (2N6576 - 2N6578) Silicon Power Transistor | ||
Fabricant | SavantIC | ||
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1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6576 2N6577 2N6578
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Power switching
·Audio amplifiers
·Hammer drivers
·Series and shunt regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6576
VCBO
Collector-base voltage 2N6577
2N6578
2N6576
VCEO
Collector-emitter voltage 2N6577
2N6578
VEBO
IC
ICM
IB
PD
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
90
120
60
90
120
7
15
30
0.25
120
200
-65~200
UNIT
V
V
V
A
A
A
W
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Pages | Pages 3 | ||
Télécharger | [ 2N6576 ] |
No | Description détaillée | Fabricant |
2N657 | BJT | New Jersey Semiconductor |
2N6573 | Nipolar NPN Device | Semelab Plc |
2N6573 | (2N6573 - 2N6576) NPN Silicon Transistor | Micro Electronics |
2N6574 | (2N6573 - 2N6576) NPN Silicon Transistor | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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