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SavantIC - Silicon Power Transistor

Numéro de référence 2N6511
Description Silicon Power Transistor
Fabricant SavantIC 
Logo SavantIC 





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2N6511 fiche technique
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6511
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·For use in switching power supply
applications and other inductive
switching circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
400
250
7
7
14
120
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.25
UNIT
/W

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