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What is EN29LV160A?

This electronic component, produced by the manufacturer "Eon Silicon Solution", performs the same function as "16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory".


EN29LV160A Datasheet PDF - Eon Silicon Solution

Part Number EN29LV160A
Description 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
Manufacturers Eon Silicon Solution　
Logo Eon Silicon Solution Logo　


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EN29LV160A
EN29LV160A
www.Data1Sh6eetM4Ue.cogmabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• 3.0V, single power supply operation
- Minimizes system level power requirements
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 µA standby current
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and thirty-one 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and thirty-one 32-Kword sectors (word mode)
• Sector protection :
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 17.5s typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Triple-metal double-poly triple-well CMOS
Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 1,000K program/erase endurance
cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable
(WE#) controls, which eliminate bus contention issues. This device is designed to allow either
single Sector or full chip erase operation, where each Sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device
can sustain a minimum of 1,000K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/07

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EN29LV160A equivalent
EN29LV160A
Table 3. Bottom Boot Sector Address Tables (EN29LV160AB)
www.DataSheet4U.com
Sector Size
(Kbytes/
Kwords)
Sector A19 A18 A17 A16 A15 A14 A13 A12
SA0 0 0 0 0 0 0 0 X
16/8
SA1 0 0 0 0 0 0 1 0
8/4
SA2 0 0 0 0 0 0 1 1
8/4
SA3 0 0 0 0 0 1 X X
32/16
SA4 0 0 0 0 1 X X X
SA5 0 0 0 1 0 X X X
SA6 0 0 0 1 1 X X X
SA7 0 0 1 0 0 X X X
SA8 0 0 1 0 1 X X X
SA9 0 0 1 1 0 X X X
SA10 0 0 1 1 1 X X X
SA11 0 1 0 0 0 X X X
SA12 0 1 0 0 1 X X X
SA13 0 1 0 1 0 X X X
SA14 0 1 0 1 1 X X X
SA15 0 1 1 0 0 X X X
SA16 0 1 1 0 1 X X X
SA17 0 1 1 1 0 X X X
SA18 0 1 1 1 1 X X X
SA19 1 0 0 0 0 X X X
SA20 1 0 0 0 1 X X X
SA21 1 0 0 1 0 X X X
SA22 1 0 0 1 1 X X X
SA23 1 0 1 0 0 X X X
SA24 1 0 1 0 1 X X X
SA25 1 0 1 1 0 X X X
SA26 1 0 1 1 1 X X X
SA27 1 1 0 0 0 X X X
SA28 1 1 0 0 1 X X X
SA29 1 1 0 1 0 X X X
SA30 1 1 0 1 1 X X X
SA31 1 1 1 0 0 X X X
SA32 1 1 1 0 1 X X X
SA33 1 1 1 1 0 X X X
SA34 1 1 1 1 1 X X X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
Address Range (in hexadecimal)
Byte mode (x8)
000000–003FFF
004000–005FFF
006000–007FFF
008000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
Word Mode
(x16)
00000–01FFF
02000–02FFF
03000–03FFF
04000–07FFF
08000–0FFFF
10000–17FFF
18000–1FFFF
20000–27FFF
28000–2FFFF
30000–37FFF
38000–3FFFF
40000–47FFF
48000–4FFFF
50000–57FFF
58000–5FFFF
60000–67FFF
68000–6FFFF
70000–77FFF
78000–7FFFF
80000–87FFF
88000–8FFFF
90000–97FFF
98000–9FFFF
A0000–A7FFF
A8000–AFFFF
B0000–B7FFF
B8000–BFFFF
C0000–C7FFF
C8000–CFFFF
D0000–D7FFF
D8000–DFFFF
E0000–E7FFF
E8000–EFFFF
F0000–F7FFF
F8000–FFFFF
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/07


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Featured Datasheets

Part NumberDescriptionMFRS
EN29LV160The function is 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon SolutionEon Silicon Solution
EN29LV160AThe function is 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon SolutionEon Silicon Solution
EN29LV160BThe function is 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon SolutionEon Silicon Solution

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