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PDF EN29LV160 Data sheet ( Hoja de datos )
| Número de pieza | EN29LV160 | |
| Descripción | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
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EN29LV160
E106N. M29eLgVab1i6t0(2**0*4*8**KPxR8E-LbIiMt /IN10A2R4KY
DRAFT******
x 16-bit) Flash
Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• 3.0V, single power supply operation
- Minimizes system level power requirements
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
and
thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 17.5s typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• 0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial Temperature Range
GENERAL DESCRIPTION
The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.
The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns
to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
1 page  
www.DataSheet4U.com
EN29LV160
Table 3. Sector Address Tables (EN29LV160B)
Sector Size Address Range (in hexadecimal)
(Kbytes/
Kwords)
Sector A19 A18 A17 A16 A15 A14 A13 A12
Byte mode (x8)
Word Mode
(x16)
SA0 0 0 0 0 0 0 0 X
16/8
000000–003FFF 00000–01FFF
SA1 0 0 0 0 0 0 1 0
8/4 004000–005FFF 02000–02FFF
SA2 0 0 0 0 0 0 1 1
8/4 006000–007FFF 03000–03FFF
SA3 0 0 0 0 0 1 X X
32/16
008000–00FFFF 04000–07FFF
SA4 0 0 0 0 1 X X X
SA5 0 0 0 1 0 X X X
SA6 0 0 0 1 1 X X X
SA7 0 0 1 0 0 X X X
SA8 0 0 1 0 1 X X X
SA9 0 0 1 1 0 X X X
SA10 0 0 1 1 1 X X X
SA11 0 1 0 0 0 X X X
SA12 0 1 0 0 1 X X X
SA13 0 1 0 1 0 X X X
SA14 0 1 0 1 1 X X X
SA15 0 1 1 0 0 X X X
SA16 0 1 1 0 1 X X X
SA17 0 1 1 1 0 X X X
SA18 0 1 1 1 1 X X X
SA19 1 0 0 0 0 X X X
SA20 1 0 0 0 1 X X X
SA21 1 0 0 1 0 X X X
SA22 1 0 0 1 1 X X X
SA23 1 0 1 0 0 X X X
SA24 1 0 1 0 1 X X X
SA25 1 0 1 1 0 X X X
SA26 1 0 1 1 1 X X X
SA27 1 1 0 0 0 X X X
SA28 1 1 0 0 1 X X X
SA29 1 1 0 1 0 X X X
SA30 1 1 0 1 1 X X X
SA31 1 1 1 0 0 X X X
SA32 1 1 1 0 1 X X X
SA33 1 1 1 1 0 X X X
SA34 1 1 1 1 1 X X X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
08000–0FFFF
10000–17FFF
18000–1FFFF
20000–27FFF
28000–2FFFF
30000–37FFF
38000–3FFFF
40000–47FFF
48000–4FFFF
50000–57FFF
58000–5FFFF
60000–67FFF
68000–6FFFF
70000–77FFF
78000–7FFFF
80000–87FFF
88000–8FFFF
90000–97FFF
98000–9FFFF
A0000–A7FFF
A8000–AFFFF
B0000–B7FFF
B8000–BFFFF
C0000–C7FFF
C8000–CFFFF
D0000–D7FFF
D8000–DFFFF
E0000–E7FFF
E8000–EFFFF
F0000–F7FFF
F8000–FFFFF
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2004/03/30
5 Page 
www.DataSheet4U.com
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
EN29LV160
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Adresses
(Word Mode)
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
Table 8. Primary Vendor-specific Extended Query
Addresses
(Byte Mode) Data
Description
80h 0050h
82h 0052h Query-unique ASCII string “PRI”
84h 0049h
86h 0031h Major version number, ASCII
88h 0030h Minor version number, ASCII
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
92h 0004h 01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
This Data Sheet may be revised by subsequent versions 11 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2004/03/30
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN29LV160.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EN29LV160 | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160A | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160B | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
| EN29LV160J | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
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