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PDF 29LV010 Data sheet ( Hoja de datos )
| Número de pieza | 29LV010 | |
| Descripción | EN29LV010 | |
| Fabricantes | Eon Silicon Solution | |
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E1dNMa20e9g.LaVbi0t1(0128K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
EN29LV010
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
• High performance
- Full voltage range: access times as fast as 55
ns
- Regulated voltage range: access times as fast
as 45ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- Eight 16 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
• High performance program/erase speed
- Byte program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle bits
feature
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• triple-metal double-poly triple-well CMOS Flash
Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package options
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
-
• Commercial and industrial Temperature Range
GENERAL DESCRIPTION
The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05
1 page  
www.DataSheet4U.com
TABLE 3. OPERATING MODES
1M FLASH USER MODE TABLE
EN29LV010
Operation
Read
Write
CMOS Standby
TTL Standby
Output Disable
Sector Protect2
Sector
Unprotect2
CE#
L
L
Vcc ± 0.3V
H
L
L
L
OE#
L
H
X
X
H
H
H
WE#
H
L
X
X
H
L
L
A0-A16
AIN
AIN
X
X
X
Sector address,
A6=L, A1=H, A0=L
Sector address,
A6=H, A1=H, A0=L
DQ0-DQ7
DOUT
DIN
High-Z
High-Z
High-Z
DIN , DOUT
DIN , DOUT
Notes:
1. L=logic low= VIL, H=Logic High= VIH, VID =11 ± 0.5V, X=Don’t Care (either L or H, but not floating!),
DIN=Data In, DOUT=Data Out, AIN=Address In
2. Sector protection/unprotection can be implemented by programming equipment.
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
1M FLASH MANUFACTURER/DEVICE ID TABLE
Description
A16 A13
A5
CE# OE# WE# to
to A92 A8 A7 A6 to A1 A0 DQ7 to DQ0
A14 A10
A2
Manufacturer
ID: Eon
L
L
H
X X VID H1 X L X L L
1Ch
Device ID
Sector
Protection
Verification
L L H X X VID X X L X L H
6Eh
01h
(Protected)
L L H SA X VID X X L X H L
00h
(Unprotected)
Note:
1. A8=H is recommended for manufacture ID check. If a manufacture ID is read with A8=L, the chip will output a configuration
code 7Fh.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05
5 Page 
www.DataSheet4U.com
EN29LV010
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or
DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the
algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC
Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the
sector erase operation. The Erase Suspend command is ignored if written during the chip erase operation
or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program data to
any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.)
Normal read and write timings and command definitions apply. Reading at any address within erase-
suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status”
for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more
information. The Autoselect command is not supported during Erase Suspend Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7: DATA Polling
The EN29LV010 provides DATA Polling on DQ7 to indicate to the host system the status of the
embedded operations. The DATA Polling feature is active during the embedded Programming,
Sector Erase, Chip Erase, Erase Suspend. (See Table 6)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the embedded Programming,
This Data Sheet may be revised by subsequent versions 11 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05
11 Page | ||
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