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Numéro de référence | 2N6470 | ||
Description | (2N6470 - 2N6472) Silicon Power Transistor | ||
Fabricant | SavantIC | ||
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1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6470 2N6471 2N6472
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6470
VCBO
Collector-base voltage 2N6471
2N6472
2N6470
VCEO
Collector-emitter voltage 2N6471
2N6472
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
70
90
40
60
80
5
15
5
125
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W
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Pages | Pages 3 | ||
Télécharger | [ 2N6470 ] |
No | Description détaillée | Fabricant |
2N6470 | (2N6470 - 2N6472) Silicon Power Transistor | SavantIC |
2N6470 | Trans GP BJT NPN 40V 15A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
2N6471 | (2N6470 - 2N6472) Silicon Power Transistor | SavantIC |
2N6471 | Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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