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Numéro de référence | 2N6360 | ||
Description | Silicon Power Transistor | ||
Fabricant | SavantIC | ||
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1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6360
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
·Excellent safe operating area
APPLICATIONS
·Designed for high power applications
and switching circuits such as relay
or solenoid drivers, dc to dc converters
or inverters.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
7
12
24
4
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
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Pages | Pages 3 | ||
Télécharger | [ 2N6360 ] |
No | Description détaillée | Fabricant |
2N6360 | Silicon Power Transistor | SavantIC |
2N6360 | Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
2N6361 | Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
2N6362 | Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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