|
|
Numéro de référence | 2N6354 | ||
Description | Silicon Power Transistor | ||
Fabricant | SavantIC | ||
Logo | |||
1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6354
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Fast switching speed
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·For switching applications in military
and industrial equipment
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
150
120
6.5
10
12
5
140
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.25
UNIT
/W
|
|||
Pages | Pages 3 | ||
Télécharger | [ 2N6354 ] |
No | Description détaillée | Fabricant |
2N6350 | NPN DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
2N6350 | Power NPN Darlingtons | UNITRODE |
2N6350 | Trans Darlington NPN 80V 5A 4-Pin TO-33 | New Jersey Semiconductor |
2N6351 | NPN DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |