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Numéro de référence | 2N6314 | ||
Description | (2N6312 - 2N6314) Silicon Power Transistor | ||
Fabricant | SavantIC | ||
Logo | |||
1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6312 2N6313 2N6314
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Low leakage current
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6312
VCBO
Collector-base voltage 2N6313
2N6314
2N6312
VCEO
Collector-emitter voltage 2N6313
2N6314
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-5
-10
-2
75
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
2.32
UNIT
/W
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Pages | Pages 3 | ||
Télécharger | [ 2N6314 ] |
No | Description détaillée | Fabricant |
2N6312 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS | Boca Semiconductor Corporation |
2N6312 | (2N6312 - 2N6314) Silicon Power Transistor | SavantIC |
2N6312 | Trans GP BJT PNP 40V 10A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
2N6312 | Power Transistor | Mospec Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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