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K15N120 fiches techniques PDF

Infineon Technologies - FAST IGBT IN NPT-TECHNOLOGY

Numéro de référence K15N120
Description FAST IGBT IN NPT-TECHNOLOGY
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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K15N120 fiche technique
SKW15N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SKW15N120
VCE
1200V
IC
15A
Eoff
1.5mJ
Tj
150°C
Marking
K15N120
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100VVCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
30
15
52
52
Unit
V
A
32
15
50
±20
10
198
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_2 Sep 08

PagesPages 13
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