|
|
Numéro de référence | 2N5875 | ||
Description | (2N5875 / 2N5876) Silicon PNP Power Transistor | ||
Fabricant | SavantIC | ||
Logo | |||
1 Page
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N5875 2N5876
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5877 2N5878
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5875
2N5876
VCEO
Collector-emitter voltage
2N5875
2N5876
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-10
-20
-4
150
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.17
UNIT
/W
|
|||
Pages | Pages 3 | ||
Télécharger | [ 2N5875 ] |
No | Description détaillée | Fabricant |
2N5870 | (2N5869 / 2N5870) Silicon NPN Power Transistor | SavantIC |
2N5871 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package | Seme LAB |
2N5871 | (2N5871 / 2N5872) Silicon PNP Power Transistor | SavantIC |
2N5871 | Trans GP BJT PNP 60V 7A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |