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Numéro de référence | LL700A | ||
Description | SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES | ||
Fabricant | SEMTECH ELECTRONICS | ||
Logo | |||
1 Page
LL700, LL700A
wSwILw.IDCatOaSNheeEt4XUP.coImTAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
for Ordinary Wave Detection
for Super High Speed Switching
Features
• Low forward rise voltage (VF) and satisfactory wave
• detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current IR
Absolute Maximum Ratings (Ta = 25oC)
Parameter
Reverse Voltage (DC)
Peak Reverse Voltage
Forward Current (DC)
Peak Forward Current
Junction Temperature
Storage Temperature Range
LL700
LL700A
LL700
LL700A
Symbol
VR
VRM
IF
IFM
Tj
TS
Rating
15
30
15
30
30
150
125
-55 to +125
Unit
V
V
mA
mA
OC
OC
Characteristics at Ta = 25oC
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward Voltage (DC)
Reverse
Current (DC)
LL700
LL700A
VF1 IF = 1mA
VF2 IF = 30mA
IR
VR = 15V
VR = 30V
- - 0.4
-- 1V
- - 100 nA
- - 150
Terminal Capacitance
Reverse Recovery Time*
Detection Efficiency
Ct VR = 1V, f = 1MHz
- 1.3 - pF
trr
IF = IR = 10mA
Irr = 1mA, RL = 100Ω
-
1
- ns
η
Vin = 3V(peak), f = 30MHz
RL = 3.9kΩ, CL = 10pF
-
60
-
%
Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
Note: (1) the charge of a human body and the leakage of current from the operating equipment.
Note: (2) Rated input / output frequency: 2,000MHz.
Note: (3) *: trr measuring instrument
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 07/02/2003
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Pages | Pages 1 | ||
Télécharger | [ LL700A ] |
No | Description détaillée | Fabricant |
LL700 | SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES | SEMTECH ELECTRONICS |
LL700A | SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES | SEMTECH ELECTRONICS |
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