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SavantIC - (2N5606 - 2N5612) Silicon NPN Power Transistors

Numéro de référence 2N5606
Description (2N5606 - 2N5612) Silicon NPN Power Transistors
Fabricant SavantIC 
Logo SavantIC 





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2N5606 fiche technique
SavantIC Semiconductor
Product Specification
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors 2N5606 2N5608 2N5610 2N5612
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5606
VCBO
Collector-base voltage
2N5608/5610 Open emitter
2N5612
2N5606
VCEO
Collector-emitter voltage 2N5608/5610 Open base
2N5612
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
120
60
80
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W

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