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Numéro de référence | 2N5607 | ||
Description | (2N5605 - 2N5611) Silicon PNP Power Transistors | ||
Fabricant | SavantIC | ||
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1 Page
SavantIC Semiconductor
Product Specification
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors 2N5605 2N5607 2N5609 2N5611
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5605
VCBO
Collector-base voltage
2N5607/5609 Open emitter
2N5611
2N5605
VCEO
Collector-emitter voltage 2N5607/5609 Open base
2N5611
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
25
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W
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Pages | Pages 3 | ||
Télécharger | [ 2N5607 ] |
No | Description détaillée | Fabricant |
2N5600 | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package | Seme LAB |
2N5600 | (2N5598 - 2N5604) Silicon NPN Power Transistors | SavantIC |
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