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Galaxy Semi-Conductor Holdings Limited - Silicon Epitaxial Planar Transistor

Numéro de référence 2SB709A
Description Silicon Epitaxial Planar Transistor
Fabricant Galaxy Semi-Conductor Holdings Limited 
Logo Galaxy Semi-Conductor Holdings Limited 





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2SB709A fiche technique
BL Galaxy Electrical
wwwS.DialtiacShoeent4UE.copmitaxial Planar Transistor
FEATURES
z High forward current transfer ratio hFE.
z Mini type package, allowing downsizing
Pb
Lead-free
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
Production specification
2SB709A
APPLICATIONS
z For general amplification complementary to 2SD601A
ORDERING INFORMATION
Type No.
Marking
2SB709A
BQ1,BR1,BS1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-45
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-7
IC Collector Current -Continuous
-200
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
1

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