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Taiwan Semiconductor Company - (FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers

Numéro de référence FRA806G
Description (FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





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FRA806G fiche technique
FRA801G THRU FRA807G
8.0www.DataSheet4U.com AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
Features
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRA FRA FRA FRA FRA FRA FRA Units
801G 802G 803G 804G 805G 806G 807G
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TC = 55
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
VDC
I(AV)
IFSM
50 100 200 400 600 800 1000 V
8.0 A
150 A
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ TC=25
at Rated DC Blocking Voltage @ TC=125
VF
IR
1.3 V
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250 500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
Cj
60 pF
Typical Thermal Resistance (Note 3)
RθJC
3.0
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate
/W
- 452 -

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