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2SA1169 fiches techniques PDF

Inchange - Silicon PNP Power Transistors

Numéro de référence 2SA1169
Description Silicon PNP Power Transistors
Fabricant Inchange 
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2SA1169 fiche technique
Inchange Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With MT-200 package
·High power dissipation
APPLICATIONS
·Audio and general purpose applications
PINNING (see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SA1169
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-200
-200
-6
-15
-5
150
150
-55~150
UNIT
V
V
V
A
A
W

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