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XP132A0265SR fiches techniques PDF

Torex Semiconductor - P-Channel Power MOS FET

Numéro de référence XP132A0265SR
Description P-Channel Power MOS FET
Fabricant Torex Semiconductor 
Logo Torex Semiconductor 





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XP132A0265SR fiche technique
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NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.065(max)
NUltra High-Speed Switching
NSOP-8 Package
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
The XP132A0265SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.065(Vgs=-5V)
: Rds(on)=0.12(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOP-8
PARAMETER
SYMBOL RATINGS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
-20
±12
-6
-20
-6
Continuous Channel
Power Dissipation (note)
Pd
2.5
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
11
751

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