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PDF FSGL134R Data sheet ( Hoja de datos )
| Número de pieza | FSGL134R | |
| Descripción | Radiation Hardened / SEGR Resistant N-Channel Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
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Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45228W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering samples FSGL134D1
100K
TXV
FSGL134R3
100K
Space
FSGL134R4
July 2001
FSGL134R
File Number 5011
Features
• 10A, 150V, rDS(ON) = 0.125Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 2nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
Packaging
G
S
TO-205AF
DG S
©2001 Fairchild Semiconductor Corporation
4-1
FSGL134R Rev. A1
1 page  
FSGL134R
Performance Curves Unless Otherwise Specified (Continued)
www.Da1ta0Sheet4U.com
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10-5
SINGLE PULSE
10-4
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION (s)
t1
t2
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
100
STA RTING TJ = 25oC
10 STAR TIN G TJ = 150oC
101
IF R = 0
tAV = (L) (IA S) / (1.3 RATED BVD SS - VD D)
IF R ≠ 0
tAV = (L/R) ln [(IA S*R ) / (1.3 RATED B VDSS - VDD ) + 1]
1
.001
.01
.1
1
10
tAV, TIME IN AVALAN CH E (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS ≤ 20V
50Ω
tP
0V
50Ω
DUT
+
VDD
-
50V -150V
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
4-5
FSGL134R Rev. A1
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FSGL134R.PDF ] | |
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