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PDF IRFY440CM Data sheet ( Hoja de datos )
| Número de pieza | IRFY440CM | |
| Descripción | POWER MOSFET N-CHANNE | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD 9.1292B
www.DataSheet4U.com
HEXFET® POWER MOSFET
IRFY440CM
N-CHANNEL
500 Volt, 0.85Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY440CM
BVDSS
500V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
RDS(on)
0.85Ω
ID
7.0A
Absolute Maximum Ratings
Parameter
IRFY440CM
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
7.0
4.4
28
100
0.8
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalance Energy
Avalance Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
510
7.0
10
3.5
TJ
Tstg
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
°C
g
1 page  
10
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IRFY440CM Device
1
D = 0.50
0 .2 0
0 .1 0
0.1
0.05
0.02
0.01
0.01
0.00001
SING LE P ULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t 1 , R e cta n g u la r P u lse D u ra tio n (se c)
0.1
A
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VDS L
D R IVE R
R G D .U .T
IAS
tp 0.01Ω
+
-
VD D
A
Fig. 12a — Unclamped Inductive Test Circuit
V (B R)DSS
tp
I AS
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFY440CM.PDF ] | |
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