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IRFY430C fiches techniques PDF

Seme LAB - N-Channel MOSFET

Numéro de référence IRFY430C
Description N-Channel MOSFET
Fabricant Seme LAB 
Logo Seme LAB 





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IRFY430C fiche technique
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IRFY430C
Dimensions in mm (inches).
10.6 (0.42)
0.8 4.6 (0.18)
(0.03)
3.70 Dia. Nom
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
123
2.54 (0.1)
BSC
1.0
(0.039)
2.70
(0.106)
1 – Gate
TO257AB (TO220M)
PINOUTS
2 – Drain
Case – Source
VDSS = 500V
ID = 4.5A
RDS(ON) = 1.5
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
VDSS
ID
PD
RDS(ON)
CISS
Qg
ttd(on)
ttr
ttd(off)
tf
Parameter
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
Static Drain – Source On–State Resistance
Input Capacitance
Total Gate Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Min.
Typ.
650
Max.
500
4.5
75
1.5
29.5
35
30
55
30
Units
V
A
W
pF
nC
ns
ns
ns
ns
This is a shortform datasheet. For a full datasheet please contact [email protected].
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Generated
13-Sep-02

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