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PDF IRFY240CM Data sheet ( Hoja de datos )
| Número de pieza | IRFY240CM | |
| Descripción | POWER MOSFET N-CHANNEL | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Provisional Data Sheet No. PD 9.1289B
www.DataSheet4U.com
HEXFET® POWER MOSFET
IRFY240CM
N-CHANNEL
200 Volt, 0.18Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY240CM
BVDSS
200V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
RDS(on)
0.18Ω
ID
16A
Absolute Maximum Ratings
Parameter
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Gate-to-Source Voltage
Single Pulse Avalance Energy
Avalance Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRFY240CM
16
10.2
64
100
0.8
±20
580
16
10
5
-55 to 150
300 (0.063 in (1.6mm) from
case for 10 sec)
4.3 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
°C
°C
g
1 page  
IRFY240CM Device
10
www.DataSheet4U.com
1
D = 0.50
0 .2 0
0 .1 0
0.1
0.05
0 .02
0 .01
0.01
0.00001
SINGLE PULSE
(TH ERMAL RESPONSE)
0.0001
PDM
Notes:
1. Duty factor D = t 1/ t 2
t1
t2
2. Peak TJ = PDMx Z thJC + T C
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
A
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VDS
L
DRIVER
RG D.U.T
IAS
tp 0.01Ω
+
- VDD
A
Fig. 12a — Unclamped Inductive Test Circuit
600
500
400
300
200
100
ID = 18A
0 VDD = 50V
A
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig. 12c — Max.Avalanche Energy vs. Current
V(BR)DSS
tp
I AS
Fig. 12b — Unclamped Inductive Waveforms
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFY240CM.PDF ] | |
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