|
|
Numéro de référence | IRFY140C | ||
Description | N-CHANNEL POWER MOSFET | ||
Fabricant | Seme LAB | ||
Logo | |||
1 Page
www.DataSheet4U.com
IRFY140C
MECHANICAL DATA
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
3.56
3.81
(0.140)
(0.150)
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
100V
15A
0.092Ω
2.54 (0.100)
BSC
0.64
0.89
(0.025)
(0.035)
Dia.
3.05 (0.120)
BSC
TO–257AA – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED TO–257AA
METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
15A
ID Continuous Drain Current @ Tcase = 100°C
10A
IDM Pulsed Drain Current
60A
PD Power Dissipation @ Tcase = 25°C
50W
Linear Derating Factor
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 6/97
|
|||
Pages | Pages 2 | ||
Télécharger | [ IRFY140C ] |
No | Description détaillée | Fabricant |
IRFY140 | N-CHANNEL POWER MOSFET | Seme LAB |
IRFY140C | N-CHANNEL POWER MOSFET | Seme LAB |
IRFY140CM | POWER MOSFET N-CHANNEL | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |