DataSheetWiki


IRFY044 fiches techniques PDF

Seme LAB - N-CHANNEL POWER MOSFET

Numéro de référence IRFY044
Description N-CHANNEL POWER MOSFET
Fabricant Seme LAB 
Logo Seme LAB 





1 Page

No Preview Available !





IRFY044 fiche technique
www.DataSheet4U.com
IRFY044
MECHANICAL DATA
Dimensions in mm (inches)
10.41
10.67
0.70
0.90
4.70
5.00
3.56
3.81
Dia.
123
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
VDSS
ID(cont)
RDS(on)
60V
20A
0.035
2.54
BSC
2.65
2.75
0.89
1.14
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS Gate – Source Voltage
ID Continuous Drain Current @ TC = 25°C
ID Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current
PD Power Dissipation @ TC = 25°C
Linear Derating Factor
±20V
20A
20A
128A
60W
0.48W/°C
TJ , Tstg
RθJC
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to 150°C
2.1°C/W max.
80°C/W max.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/95

PagesPages 2
Télécharger [ IRFY044 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFY044 N-CHANNEL POWER MOSFET Seme LAB
Seme LAB
IRFY044C N-CHANNEL POWER MOSFET Seme LAB
Seme LAB
IRFY044CM POWER MOSFET N-CHANNE International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche