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PDF K50T60T Data sheet ( Hoja de datos )

Número de pieza K50T60T
Descripción IKW50N60T
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo

K50T60T datasheet


1. - 600V, 80A, IGBT, Transistor






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TrenchStop Series
IKW50N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
P-TO-247-3-1
(TO-220AC)
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IKW50N60T 600V 50A
1.5V
175°C
K50T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247 Q67040S4718
Value
600
801)
50
150
150
100
50
150
±20
5
333
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) Value limited by bond wire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Dec-04

1 page




K50T60T pdf
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TrenchStop Series
IKW50N60T
q
120A
100A VGE=20V
15V
80A
13V
11V
60A 9V
7V
40A
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
100A VGE=20V
15V
80A
13V
11V
60A
40A
9V
7V
20A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
1.5V
1.0V
IC=100A
IC=50A
IC=25A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Dec-04

5 Page





K50T60T arduino
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TO-247AC
TrenchStop Series
IKW50N60T
q
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
Q
dimensions
[mm]
[inch]
min max min max
4.78 5.28 0.1882 0.2079
2.29 2.51 0.0902 0.0988
1.78 2.29 0.0701 0.0902
1.09 1.32 0.0429 0.0520
1.73 2.06 0.0681 0.0811
2.67 3.18 0.1051 0.1252
0.76 max
0.0299 max
20.80 21.16 0.8189 0.8331
15.65 16.15 0.6161 0.6358
5.21 5.72 0.2051 0.2252
19.81 20.68 0.7799 0.8142
3.560 4.930 0.1402 0.1941
3.61 0.1421
6.12 6.22 0.2409 0.2449
Power Semiconductors
11
Rev. 2.1 Dec-04

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