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PDF JANTX1N6511 Data sheet ( Hoja de datos )
| Número de pieza | JANTX1N6511 | |
| Descripción | Diode Array | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N6511
JANTX, JANTXV
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
• QUALIFIED PARTS LISTING: MIL-PRF-19500/474
•www.DataSheet4U.coBmv > 75V at 5uA
• Ir < 100nA at 40V
• C < 4.0 pF
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Absolute Maximum Ratings:
Symbol
Parameter
Limit Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top Operating Junction Temperature Range
Tstg Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
75 Vdc
300 mAdc
500 mAdc
400 mW
600 mW
-65 to +150 °C
-65 to +200 °C
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
.200
.125
.023
.014
.070
.030
.100
BSC
.200
MAX
.320
.290
.310
.220
.005
MIN
.785
MAX
.060
.015
.098
MAX
O-15
.015
.008
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1 Forward Voltage
If = 100mAdc *1
IR1 Reverse Current
VR = 40 Vdc
IR2 Reverse Current
VR = 20 Vdc
Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz
tfr Forward Recovery Time If = 100mAdc
trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
VF5 Forward Voltage Match If = 10 mA
1 Vdc
0.1 uAdc
25 nAdc
4.0 pF
15 ns
10 ns
5 mV
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1010.PDF Rev - 11/24/98
1 page | ||
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