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Advanced Power Electronics - AP3310GH

Numéro de référence 3310GH
Description AP3310GH
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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3310GH fiche technique
Advanced Power
Electronics Corp.
AP3310GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
2.5V Gate Drive Capability
www.DataSheet4U.cFomast Switching Characteristic
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
This device is suited for low voltage and battery power applications.
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
GD
S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Value
5.0
110
Units
/W
/W
Data and specifications subject to change without notice
1
200808155

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