DataSheetWiki


RGP30A fiches techniques PDF

Taiwan Semiconductor Company - (RGP30x) Glass Passivated Junction Fast Recovery Rectifiers

Numéro de référence RGP30A
Description (RGP30x) Glass Passivated Junction Fast Recovery Rectifiers
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





1 Page

No Preview Available !





RGP30A fiche technique
RGP30A THRU RGP30M
Features
3.0 AMPS. Glass Passivated Junction Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
DO-201AD
High temperature metallurgically bonded constructed
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
www.DataSheet4U.com3T.y0paicmalpIeRrleesospethraatnio0n.2atuTAA=55oC with no thermal runaway
High temperature soldering guaranteed:
350oC / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs.,
(2.3kg) tension
Fast switching for high efficiency
Mechanical Data
Case: JEDEC DO-201AD molded plastic over glass body
Lead: Plated Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.048 ounce, 1.28 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol RGP RGP RGP RGP RGP RGP RGP Units
30A 30B 30D 30G 30J 30K 30M
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@ TA = 55
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
50 100 200 400 600 800 1000 V
3.0 A
125 A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.3 V
Maximum DC Reverse Current@ TA=25
at Rated DC Blocking Voltage @TA=125
IR
5.0 uA
100 uA
Maximum Reverse Recovery Time ( Note 1 )
TJ=25
Trr
150
250 500
nS
Typical Junction Capacitance ( Note 2 )
Cj
40 pF
Typical Thermal Resistance (Note 3)
RθJA
30 /W
Operating & Storage Temperature Range TJ , TSTG
-65 to + 175
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A Recover to 0.25A.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
- 580 -

PagesPages 2
Télécharger [ RGP30A ]


Fiche technique recommandé

No Description détaillée Fabricant
RGP30 SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Zowie Technology Corporation
Zowie Technology Corporation
RGP30 GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER General Semiconductor
General Semiconductor
RGP30 3.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts Micro Commercial Components
Micro Commercial Components
RGP30 Fast Silicon Rectifiers Diotec Semiconductor
Diotec Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche