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Número de pieza | HMC632LP5E | |
Descripción | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC632LP5E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! HMC632LP5 / 632LP5E
v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 14.25 - 15.65 GHz
Typical Applications
The HMC632LP5(E) is ideal for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Functional Diagram
8
Features
Dual Output: Fo = 14.25 - 15.65 GHz
Fo/2 = 7.125 - 7.825 GHz
Pout: +9 dBm
Phase Noise: -107 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
General Description
The HMC632LP5(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC632LP5(E) integrates resonators, negative resis-
tance devices, varactor diodes and features half-
frequency and divide-by-4 outputs. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is +9 dBm typical from a +5V
supply voltage. The prescaler and RF/2 functions can
be disabled to conserve current if not required. The
voltage controlled oscillator is packaged in a leadless
QFN 5x5 mm surface mount package, and requires no
external matching components.
8-1
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Fo
Fo/2
RFOUT
RFOUT/2
RFOUT/4
Vtune
Icc(Dig) + Icc(Amp) + Icc(RF)
1/2
2nd
Min.
4
7
-8
2
280
Typ.
14.25 - 15.65
7.125 - 7.825
-107
350
2
25
25
10
35
1.0
Max.
12
13
-2
13
400
10
Units
GHz
GHz
dBm
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page HMC632LP5 / 632LP5E
v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 14.25 - 15.65 GHz
Pin Descriptions
Pin Number
Function
7 Vcc (Amp)
Description
Supply voltage, for RFOUT/2 output. If RFOUT/2
is not required, this pin may be left open to
conserve approximately 30 mA of current.
Interface Schematic
12 RFOUT/2
Half frequency output (AC coupled).
19 RF OUT
RF output (AC coupled).
8
21 Vcc (RF)
Supply Voltage, +5V
Control voltage and modulation input. Modulation
29
VTUNE
bandwidth dependent on drive source impedance. See
“Determining the FM Bandwidth of a Wideband Varac-
tor Tuned VCO” application note.
5, 11, Paddle
GND
Package bottom has an exposed metal paddle that
must be connected to RF/DC ground.
Typical Application Circuit
8-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HMC632LP5E.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC632LP5 | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
HMC632LP5E | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO | Hittite Microwave Corporation |
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