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PDF HMC608 Data sheet ( Hoja de datos )
| Número de pieza | HMC608 | |
| Descripción | GaAs PHEMT MEDIUM POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC608 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v01.0707
3
Typical Applications
The HMC608 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military End-Use
www.DataSheet4U.com
Functional Diagram
HMC608
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Features
Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 32 dB
Supply: +5V @ 310 mA
50 Ohm Matched Input/Output
2.1 x 1.2 x 0.1 mm Die Size
General Description
The HMC608 is a high dynamic range GaAs PHEMT
MMIC Medium Power Amplifier chip. The amplifier
has two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specifications in the table below
are shown for the amplifier operating in high gain
mode. Operating from 9.5 to 11.5 GHz, the amplifier
provides 32 dB of gain, +27.5 dBm of saturated power
and 23% PAE from a +5.0 V supply voltage. Noise
figure is 5.5 dB while output IP3 is +33 dBm. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use.
3 - 104
Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
Gain [3]
Gain Variation Over Temperature
Input Return Loss
9.5 - 11.5
GHz
28 32
dB
0.02
0.03
dB/ °C
12 dB
Output Return Loss
20 dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
23 27
27.5
33
dBm
dBm
dBm
Noise Figure
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3]
[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.
5.5 dB
310 350 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.0707
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 25.89 mW/°C above 85 °C)
www.DataSheet4U.coTmhermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
7 Vdc
-4.0 to -1.0 Vdc
+10 dBm
175 °C
2.33W
38.6 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC608
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
300
+5.0
310
+5.5
325
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 108
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC608.PDF ] | |
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