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Datasheet PBRV-H-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
PBR Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PBR941 | UHF wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PBR941 UHF wideband transistor
Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES • Small size • Lo NXP Semiconductors transistor | | |
2 | PBR941B | UHF wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B UHF wideband transistor
Preliminary specification
2001 Jan 18
Philips Semiconductors
UHF wideband transistor
Preliminary specification
PBR941B
FEATURES
• Small size • Low noise • Low distortion • High gain • Gold metalli NXP Semiconductors transistor | | |
3 | PBR951 | UHF wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR951 UHF wideband transistor
Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES • Small size • L NXP Semiconductors transistor | | |
4 | PBRC-G | MHz Band Ceramic Chip Resonators
MHz Band Ceramic Chip Resonators (SMD) PBRC-G / PBRC-L Series
Features
• High reliability, high temperature withstanding ceramic case • Rectangular shape allows easy pick and placement • Small & low profile • Reflow solderable • Excellent Solderability(Nickel barrier+ Kyocera Kinseki resonator | | |
5 | PBRC-L | MHz Band Ceramic Chip Resonators
MHz Band Ceramic Chip Resonators (SMD) PBRC-G / PBRC-L Series
Features
• High reliability, high temperature withstanding ceramic case • Rectangular shape allows easy pick and placement • Small & low profile • Reflow solderable • Excellent Solderability(Nickel barrier+ Kyocera Kinseki resonator | | |
6 | PBRN113E | NPN 800 mA 40 V BISS RETs
PBRN113E series
NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 01 — 1 March 2007 Product data sheet
1. Product profile
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic pac NXP Semiconductors data | | |
7 | PBRN123E | NPN 800 mA 40 V BISS RETs
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007 Product data sheet
1. Product profile
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small pla NXP Semiconductors data | |
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