|
|
Numéro de référence | IRFZ44 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Fairchild | ||
Logo | |||
1 Page
$GYDQFHG 3RZHU 026)(7
www.DataSheet4U.com
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V
♦ Lower RDS(ON): 0.020Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRFZ44
BVDSS = 60 V
RDS(on) = 0.024Ω
ID = 50 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
60
50
35.4
200
±20
857
50
12.6
5.5
126
0.84
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
1.19
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
|
|||
Pages | Pages 7 | ||
Télécharger | [ IRFZ44 ] |
No | Description détaillée | Fabricant |
IRFZ40 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFZ40 | (IRFZ42 / IRFZ40) N-Channel Enhancement Mode Power MOS Transistors | ST Microelectronics |
IRFZ40 | (IRFZ40 - IRFZ45) N-Channel Power MOSFETS | Samsung Electronics |
IRFZ40 | (IRFZ40 / IRFZ42) Power Field Effect Transistors | Motorola Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |