DataSheetWiki


PCR606J fiches techniques PDF

KCD - Sensitive Gate Silicon Controlled Rectifiers

Numéro de référence PCR606J
Description Sensitive Gate Silicon Controlled Rectifiers
Fabricant KCD 
Logo KCD 





1 Page

No Preview Available !





PCR606J fiche technique
Sensitive Gate
Silicon Controlled Rectifiers
Features
www.DataSheet4U.com
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 0.6 A )
Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
PCR606J
Symbol
3. Anode
2. Gate
1. Cathode
TO-92
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Half Sine Wave : TC = 74 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
TA =25°C, Pulse Width 1.0
TA =25°C, t = 8.3ms
Ratings
600
0.5
0.6
6
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C[P
Wed: http://www.kcd.net.cn
1/5

PagesPages 5
Télécharger [ PCR606J ]


Fiche technique recommandé

No Description détaillée Fabricant
PCR606 (PCR-06 Series) SCRs HaoHai
HaoHai
PCR606 Silicon Planar PNPN Thyristors SeCoS
SeCoS
PCR606 0.6A SENSITIVE SCRs KCD
KCD
PCR606 Silicon Planar pnpn Thyristor HAOCHANG
HAOCHANG

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche